PHP82NQ03LT Datasheet, PDF (3/14 Pages) NXP Semiconductors – TrenchMOS™ logic level FET

Philips Semiconductors
PHP/PHB/PHD82NQ03LT
TrenchMOS™ logic level FET
120
Pder
(%)
80
03aa16
120
I_der
(%)
80
03ai53
40
40
0
0
50
100
150
200
T_mb (^oC)
P_der = _P-------^P----^t--^o---^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
103
I_D
(A)
R_DSon = V_DS / I_D
102
0
0
50
100
150
200
T_mb (ºC)
I_der = -_I-------^I--^D--------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ai55
t_p = 10 µs
100 µs
1 ms
10
DC
10 ms
1
1
10
102
V_DS (V)
T_mb = 25 °C; I_DM is single pulse; V_GS = 10V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09308
Product data
Rev. 01 — 28 March 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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