PHP82NQ03LT Datasheet, PDF (6/14 Pages) NXP Semiconductors – TrenchMOS™ logic level FET

Philips Semiconductors
PHP/PHB/PHD82NQ03LT
TrenchMOS™ logic level FET
80
I_D
T_j = 25 ºC
(A)
60
10 V 6 V 5 V 4.4 V
03ai56
4V
3.8 V
80
I_D ^{VDS > ID x RDSon}
(A)
60
03ai58
40
20
0
0
3.6 V
3.4 V
3.2 V
3V
V_GS = 2.8 V
0.2
0.4
0.6
0.8
1
V_DS (V)
40
20
0
0
175 ºC
1
2
T_j = 25 ºC
3 _{VGS (V)} 4
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.016
03ai57
2
R_DSon T_j = 25 ºC
a
(Ω)
0.012
V_GS = 4 V
1.6
0.008
0.004
4.4 V
1.2
5V
6V
0.8
10 V
0.4
03af18
0
0
20
40
60
80
I_D (A)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
T_j (ºC)
a = -_R---_D----^R_S---_oD---_n-^S-₍--^o2--₅-ⁿ--_°--_C---₎
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 09308
Product data
Rev. 01 — 28 March 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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