PHP52N06T Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHP52N06T
N-channel enhancement mode field-effect transistor
80
I_S ^VGS ^{= 0 V}
(A)
60
40
20
175 ºC
03ag70
T_j = 25 ºC
10
V_GS
(V)
8
I_D = 25 A
T_j = 25 ºC
V_DD = 14 V
6
4
2
03ag72
44 V
0
0
0.4
0.8
1.2
V_SD (V)
0
0
20
40
60
80
Q_G (nC)
V_GS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
T_j = 25 °C; I_D = 40 A
Fig 13. Gate-source voltage as a function of turn-on
gate charge; typical values.
9397 750 09121
Product data
Rev. 01 — 9 January 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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