PHP52N06T Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

PHP52N06T
N-channel enhancement mode field-effect transistor
Rev. 01 — 9 January 2002
Product data
M3D307
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™¹ technology.
Product availability:
PHP52N06T in SOT78 (TO-220AB).
2. Features
s Low on-state resistance
s 175 °C rated.
3. Applications
s DC to DC converters
s Uninterruptible power supplies
s Switched mode power supplies.
4. Pinning information
Table 1: Pinning - SOT78, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
mb
2 drain (d)
3 source (s)
mb mounting base;
connected to drain (d)
MBK106
123
SOT78 (TO-220AB)
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.