PHP52N06T Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHP52N06T
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
R_th(j-mb) thermal resistance from junction to mounting base Figure 4
R_th(j-a) thermal resistance from junction to ambient
vertical in still air
7.1 Transient thermal impedance
Typ Max Unit
- 1.25 K/W
60 - K/W
10
Z_th(j-mb)
(K/W)
1
δ = 0.5
0.2
10-1 ^0.1
0.05
0.02
10-2
10-6
single pulse
10-5
10-4
10-3
10-2
03ag57
P
δ
=
tp
T
tp
t
T
10-1
1
t_p (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 09121
Product data
Rev. 01 — 9 January 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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