PHP47NQ10T Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
100
IS
(A)
80
60
40
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Tj = 175 ^oC
25 ^oC
10
VGS
(V)
8
6
4
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VDD = 20 V
VDD = 80 V
20
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD (V)
T_j = 25 °C and 175 °C; V_GS = 0 V
Fig 14. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
0
0 10 20 30 40 50 60 70
QG (nC)
I_D = 40 A; V_DD = 20 V and 80 V
Fig 15. Gate-source voltage as a function of gate
charge; typical values.
9397 750 08243
Product data
Rev. 01 — 16 May 2001
© Philips Electronics N.V. 2001. All rights reserved.
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