PHP47NQ10T Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
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4.5
VGS(th) ⁴
max
(V) 3.5
3
typ
2.5
2
min
1.5
1
0.5
0
-60 -20 20 60 100 140 180
Tj (oC)
I_D = 1 mA; V_DS = V_GS
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
10-1
ID
(A)
10-2
10-3
10-4
10-5
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2%
typ
98%
10-6
0
1
2
3
4
5
VGS (V)
T_j = 25 °C
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
45
gfs
(S) ⁴⁰
35
30
25
20
15
10
5
0
0
20
40
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60
80
100
ID (A)
T_j = 25 °C; V_DS = 25 V
Fig 12. Forward transconductance as a function of
drain current; typical values.
5
Ciss,
Coss,
Crss ₄
(nF)
3
2
Ciss
Coss
Crss
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1
0
10-2
10-1
1
10
102
VDS (V)
V_GS = 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 08243
Product data
Rev. 01 — 16 May 2001
© Philips Electronics N.V. 2001. All rights reserved.
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