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PHP47NQ10T Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown
voltage
ID = 250 µA; VGS = 0 V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 10
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
VGS = 0 V; VDS = 100 V
Tj = 25 °C
Tj = 175 °C
VDS = 0 V; VGS = ±20 V
VGS = 10 V; ID = 25 A;
Figure 8 and 9
Dynamic characteristics
Tj = 25 oC
Tj = 175 °C
Qg(tot)
total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 40 A; VDD = 80 V;
VGS = 10 V; Figure 15
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 13
VDD = 30 V; RD = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
VSD
source-drain (diode forward) IS = 25 A; VGS = 0 V;
voltage
Figure 14
trr
reverse recovery time
IS = 47 A;
Qr
recovered charge
dIS/dt = −100 A/µs;
VGS = -10 V; VR = 30 V
Min
Typ
Max
Unit
100
−
−
V
2
3
4
V
1
−
−
V
−
0.05
10
µA
−
−
500
µA
−
2
100
nA
−
20
28
mΩ
−
−
76
mΩ
−
66
−
nC
−
12
−
nC
−
21
−
nC
−
2320
3100
pF
−
315
378
pF
−
187
256
pF
−
15
23
ns
−
70
105
ns
−
83
116
ns
−
45
63
ns
−
0.85
1.2
V
−
66
−
ns
−
0.24
−
µC
9397 750 08243
Product data
Rev. 01 — 16 May 2001
© Philips Electronics N.V. 2001. All rights reserved.
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