PHP47NQ10T Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
180
ID ₁₆₀
(A)
140
120
100
80
60
40
20
0
0
VGS = 10 V 8.0 V
003aaa100
20 V
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
4.5 V
2
4
6
8
10
VDS (V)
100
ID
(A)
80
60
40
20
0
0
003aaa101
o
Tj = 175 ^oC
25 ^oC
2
4
6
8
VGS (V)
T_j = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D × R_DSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
65
RDSon ^{60 VGS = 5.5 V}
(mΩ) ₅₅
50
45
40
35
30
25
20
15
5
25 45
T_j = 25 °C
6.0 V
003aaa102
6.5 V
7.0 V
7.5 V
8.0 V
10 V
65
85 105 125
ID (A)
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values.
003aaa103
2.0
1.8
a
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-60 -20
20 60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 9. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08243
Product data
Rev. 01 — 16 May 2001
© Philips Electronics N.V. 2001. All rights reserved.
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