PHP109 Datasheet, PDF (8/12 Pages) NXP Semiconductors – P-channel enhancement mode MOS transistor

Philips Semiconductors
P-channel enhancement mode
MOS transistor
Product specification
PHP109
handbook¹, h^.4alfpage
k
1.2
MGD389
1.0
0.8
0.6
−75
−25
25
75
125
175
Tj (^oC)
k = -V----_G^V----_SG---_t-^Sh---^t--^h_{a---t--a--2-t--5--T--°}--^j-C---
V_GSth at V_DS =V_GS ; I_D = −1 mA.
Fig.12 Temperature coefficient of gate-source
threshold voltage as a function of junction
temperature; typical values.
handbook¹, ^.h⁸alfpage
k
1.4
MGD390
(1)
(2)
1.0
0.6
−75
−25
25
75
125
175
Tj (^oC)
k = _R-----D-R---_S-^D--_o--^S-_n--^o--a-ⁿ---t--a-2--t-5---T---_°-^j--C---
R_DSon at:
(1) V_GS = −10 V; I_D = −2.5 A.
(2) V_GS = −4.5 V; I_D = −1.25 A.
Fig.13 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; typical values.
1997 Jun 18
8