PHP109 Datasheet, PDF (7/12 Pages) NXP Semiconductors – P-channel enhancement mode MOS transistor

Philips Semiconductors
P-channel enhancement mode
MOS transistor
handbook¹,⁰h³alfpage ₍₁₎
(2)
(3)
RDSon
(4)
(mΩ)
(5)
(6)
10²
MGD388
10
0
−2
−4
V_DS ≥ I_D × R_DSon; T_j = 25 °C.
(1) I_D = −100 mA.
(2) I_D = −500 mA.
(3) I_D = −1.25 A.
−6
−8
−10
VGS (V)
(4) I_D = −2.5 A.
(5) I_D = −5 A.
(6) I_D = −7 A.
Fig.9 Drain source on-state resistance as a
function of gate-source voltage; typical
values.
Product specification
PHP109
handboo²k⁵, ⁰h⁰alfpage
C
(pF)
2000
1500
1000
500
0
0
−8
MGD383
Ciss
Coss
Crss
−16
−24
VDS (V)
V_GS = 0; f = 1 MHz; T_j = 25 °C.
Fig.10 Capacitance as a function of drain-source
voltage; typical values.
handbook, full pagewidth
Vin
−VDD
RL
Vout
0
Vin
0
Vout
10 %
90 %
10 %
10 %
90 %
td(on)
tr
ton
td(off)
toff
90 %
tf
MGD391
1997 Jun 18
Fig.11 Switching times test circuit and input and output waveforms.
7