PHP109 Datasheet, PDF (6/12 Pages) NXP Semiconductors – P-channel enhancement mode MOS transistor

Philips Semiconductors
P-channel enhancement mode
MOS transistor
Product specification
PHP109
handbook^−,¹h⁰alfpage
VGS
(V)
−8
MGD386
−6
−4
−2
0
0
−5 −10 −15 −20 −25 −30
Qg (nC)
V_DD = −15 V: I_D = −2.5 A.
Fig.5 Gate-source voltage as a function of total
gate charge; typical values.
−24
handboo_Ik_D, halfpage
(A)
−20
−16
VGS =
−10 V
−7.5 V
−5 V
−12
−4 V
−8
−3.5 V
−4
−3 V
−2.5 V
0
0
−2
−4
−6
MGD384
−8
−10
VDS (V)
T_j = 25 °C.
Fig.6 Output characteristics; typical values.
handbook^−,²h⁰alfpage
ID
(A)
−16
MGD385
−12
−8
−4
0
0
−2
−4
−6
−8
VGS (V)
V_DS = −10 V; T_j = 25 °C.
Fig.7 Transfer characteristics; typical values.
1997 Jun 18
handbook^−,²h⁰alfpage
ISD
(A)
−16
−12
MGD387
−8
(1) (2) (3)
−4
0
0 −0.4
V_GD = 0.
(1) T_j = 150 °C.
(2) T_j = 25 °C.
(3) T_j = −65 °C.
−0.8 −1.2
−1.6 −2.0 −2.4
VSD (V)
Fig.8 Source current as a function of source-drain
diode forward voltage; typical values.
6