BUK7C06-40AITE Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
80
g_fs
(S)
60
40
03ni24
8
C
(nF)
6
4
03ne67
C_iss
20
0
0
25
50
75
100
I_D (A)
T_j = 25 °C; V_DS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values
100
I_D
(A)
75
03ni25
50
T_j = 175 °C 25 °C
25
2
0
10^−1
1
C_oss
C_rss
10
10²
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
10
V_GS
(V)
8
03ni26
6
V_DS = 14 V
32 V
4
2
0
0
2
4
6
V_GS (V)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
0
40
80
120
Q_G (nC)
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values
BUK7C06-40AITE_4
Product data sheet
Rev. 04 — 23 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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