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BUK7C06-40AITE Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
IDSS
V(BR)GSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
drain leakage current
VDS = 40 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
gate-source breakdown
voltage
IG = ±1 mA; −55 °C < Tj < +175 °C
IGSS
gate leakage current
RDSon
drain-source on-state
resistance
VF
forward voltage of
temperature sense diode
VGS = ±10 V; VDS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 50 A; see Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
IF = 250 µA
SF
temperature coefficient of
IF = 250 µA; −55 °C < Tj < +175 °C
temperature sense diode
Vhys
forward voltage hysteresis of 125 µA < IF < 250 µA
temperature sense diode
ID/Isense ratio of drain current to sense VGS = 10 V; −55 °C < Tj < +175 °C
current
Dynamic characteristics
QG(tot) total gate charge
VGS = 10 V; VDS = 32 V; ID = 25 A;
see Figure 14
QGS
gate-source charge
VGS = 10 V; VDS = 32 V; ID = 25 A;
see Figure 14
QGD
gate-drain charge
VGS = 10 V; VDS = 32 V; ID = 25 A;
see Figure 14
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 12
Coss
output capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 12
Crss
reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 12
Min Typ Max Unit
40
-
-
V
36
-
-
V
2
3
4
V
1
-
-
V
-
-
4.4 V
-
0.1 10
µA
-
-
250 µA
20
22
-
V
-
22
1000 nA
-
-
10
µA
-
4.7 6
mΩ
-
-
11.4 mΩ
648 658 668 mV
−1.4 −1.54 −1.68 mV/K
25
32
50
mV
585 615 645
-
120 -
nC
-
19
-
nC
-
50
-
nC
-
4300 -
pF
-
1400 -
pF
-
820 -
pF
BUK7C06-40AITE_4
Product data sheet
Rev. 04 — 23 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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