BUK7C06-40AITE Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
BUK7C06-40AITE
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
BUK7C06-40AITE
D2PAK
4. Limiting values
Description
Plastic single-ended surface mounted package; 7 leads (one lead
cropped)
Version
SOT427
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V; see Figure 2 and 3
I_DM
P_tot
I_GS(CL)
peak drain current
total power dissipation
gate-source clamping
current
V_{isol(FET-TSD)} FET to temperature sense
diode isolation voltage
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_DR
reverse drain current
T_mb = 100 °C; V_GS = 10 V; see Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; see Figure 3
T_mb = 25 °C; see Figure 1
continuous
t_p = 5 ms; δ = 0.01
T_mb = 25 °C
I_DRM
peak reverse drain current
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
Electrostatic discharge
V_esd
electrostatic discharge
voltage, pins 1, 2, 4, 6, 7
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
unclamped inductive load; I_D = 75 A;
V_DS ≤ 40 V; V_GS = 10 V; R_GS = 50 Ω; starting
at T_j = 25 °C
Human Body Model; C = 100 pF; R = 1.5 kΩ
Min
-
-
-
[1] _-
[2] _-
[2] _-
-
-
-
-
-
−55
−55
[1] _-
[2] _-
-
-
-
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Max Unit
40
V
40
V
±20 V
155 A
75
A
75
A
620 A
272 W
10
mA
50
mA
±100 V
+175 °C
+175 °C
155 A
75
A
620 A
1.46 J
6
kV
BUK7C06-40AITE_4
Product data sheet
Rev. 04 — 23 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
2 of 14