BUK7C06-40AITE Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7C06-40AITE
N-channel TrenchMOS standard level FET
Rev. 04 — 23 June 2005
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using TrenchMOS technology, featuring very low on-state resistance and including
TrenchPLUS current sensing, and diodes for ElectroStatic Discharge (ESD) and
overtemperature protection.
1.2 Features
s Q101 compliant
s ESD protection
s Integrated temperature sensor
s Integrated current sensor
1.3 Applications
s Variable valve timing for engines
s Automotive and power switching
s Electrical power assisted steering
s Fan control
1.4 Quick reference data
s V_DS ≤ 40 V
s I_D ≤ 155 A
s R_DSon = 4.7 mΩ (typ)
s V_F = 658 mV (typ)
s S_F = −1.54 mV/K (typ)
s I_D/I_sense = 615 (typ)
2. Pinning information
Table 1:
Pin
1
2
3
4
5
6
7
mb
Pinning
Description
gate (G)
I_sense
anode (A)
drain (D)
cathode (K)
kelvin source
source (S)
mounting base; connected to
drain (D)
Simplified outline Symbol
mb
DA
4
123 567
SOT427 (D2PAK)
G
I_{sense S K}
Kelvin source
sym110