BUK765R2-40B_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK765R2-40B
N-channel TrenchMOS standard level FET
100
I_D
(A)
75
50
25
0
0
03nk17
T_j = 175 °C
T_j = 25 °C
2
4 _{VGS (V)} 6
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
10
03nk20
2
6
7
8
R_DSon
a
(mΩ)
8
1.5
10
6
1
20
03aa27
4
0.5
label is V_GS (V)
2
0
100
200
300
400
I_D (A)
0
−60
0
60
120 _{Tj (°C)} 180
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK765R2-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 November 2011
© NXP B.V. 2011. All rights reserved.
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