BUK765R2-40B_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK765R2-40B
N-channel TrenchMOS standard level FET
Rev. 3 — 22 November 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Q101 compliant
 Suitable for standard level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V loads
 Automotive systems
 General purpose power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol
V_DS
I_D
Parameter
drain-source voltage
drain current
Conditions
Min Typ Max Unit
T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
40 V
V_GS = 10 V; T_mb = 25 °C; see Figure 1; ^[1] -
-
75 A
see Figure 3
P_tot
total power dissipation
Static characteristics
T_mb = 25 °C; see Figure 2
-
-
203 W
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
see Figure 11; see Figure 12
-
4.4 5.2 mΩ
Dynamic characteristics
Q_GD
gate-drain charge
Avalanche ruggedness
V_GS = 10 V; I_D = 25 A; V_DS = 32 V;
T_j = 25 °C; see Figure 13
-
16
-
nC
E_DS(AL)S
non-repetitive drain-source I_D = 75 A; V_sup ≤ 40 V; R_GS = 50 Ω;
-
-
494 mJ
avalanche energy
V_GS = 10 V; T_j(init) = 25 °C; unclamped
[1] Continuous current is limited by package.