BUK765R2-40B_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK765R2-40B
N-channel TrenchMOS standard level FET
400
I_D
(A)
300
20
14
12
10 _9.5
9
03nk19
label is V_GS (V)
8.5
8
7.5
200
7
6.5
100
6
5.5
5
4.5
0
0
2
4
6
8
10
V_DS (V)
18
R_DSon
(mΩ)
13
03nk18
8
3
5
10
15
20
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
10^−3
10^−4
03aa35
min typ max
80
g_fs
(S)
60
40
03nk16
20
10^−5
10^−6
0
2
4
6
V_GS (V)
0
0
20
40
60
80
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK765R2-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 November 2011
© NXP B.V. 2011. All rights reserved.
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