BUK764R0-75C_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK764R0-75C
N-channel TrenchMOS standard level FET
10
V_GS
(V)
8
6
4
2
0
0
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V_DS = 14 V
V_DS = 60 V
50
100
150
200
Q_G (nC)
16000
C
(pF)
C_iss
12000
8000
C_oss
4000
C_rss
0
10^-1
1
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10 _{VDS (V)} 10²
Fig 9. Gate-source voltage as a function of gate
charge; typical values
250
I_S
(A)
200
Fig 10. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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150
100
50
0
0
T_j = 175 °C
T_j = 25 °C
0.5
1
1.5 _{VSD (V)} 2
Fig 11. Source current as a function of source-drain diode; typical values
BUK764R0-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
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