BUK764R0-75C_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK764R0-75C
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
„ AEC-Q101 compliant
„ Avalanche robust
„ Suitable for standard level gate drive
„ Suitable for thermally demanding
environment due to 175 °C rating
1.3 Applications
„ 12 V Motor, lamp and solenoid loads
„ High performance automotive power
systems
„ High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
Table 1.
Symbol
V_DS
I_D
P_tot
Quick reference data
Parameter
Conditions
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1; see Figure 4
total power
dissipation
T_mb = 25 °C; see Figure 2
Min Typ Max Unit
-
-
75 V
[1][2] _-
-
100 A
-
-
333 W