BUK764R0-75C_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK764R0-75C
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 5. Gate-source threshold voltage as a function of Fig 6. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
12
R_DSon
(mΩ)
10
003aab386
2.4
a
1.8
03aa28
8
1.2
6
0.6
4
2
5
10
15 _{VGS (V)} 20
0
−60
0
60
120
180
T_j (°C)
Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain-source on-state resistance
of gate-source voltage; typical values
factor as a function of junction temperature
BUK764R0-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
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