BUK764R0-75C_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK764R0-75C
N-channel TrenchMOS standard level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 7;
see Figure 8
I_GSS
gate leakage current V_DS = 0 V; V_GS = 20 V;
T_j = 25 °C
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
I_D = 100 A; V_sup ≤ 75 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
[1] Refer to document 9397 750 12572 for further information.
[2] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
-
3.4 4 mΩ
-
2 100 nA
-
-
630 mJ
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
gate
D
drain^[1]
S
source
D
mounting base;
connected to drain
Simplified outline
mb
2
13
SOT404 (D2PAK)
[1] It is not possible to make a connection to pin 2 of the SOT404 package.
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK764R0-75C
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
Version
SOT404
BUK764R0-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
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