BUK7608-40B_15 Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7608-40B
N-channel TrenchMOS standard level FET
100
I_S
(A)
75
003aac071
50
25
0
0.0
T_j = 175 °C
0.3
0.6
25 °C
0.9
1.2
V_SD (V)
10
V_GS
(V)
8
6
4
2
0
0
003aac072
V_DD = 14 V
V_DD = 32 V
10
20
30
40
Q_G (nC)
Fig 13. Reverse diode current as a function of reverse Fig 14. Gate-source voltage as a function of turn-on
diode voltage; typical values
gate charge; typical values
3000
C
(pF)
2000
C_iss
003aac078
C_oss
1000
C_rss
0
10^−2
10^−1
1
10
10²
V_DS (V)
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
BUK7608-40B_4
Product data sheet
Rev. 04 — 24 September 2008
© NXP B.V. 2008. All rights reserved.
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