BUK7608-40B_15 Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7608-40B
N-channel TrenchMOS standard level FET
300
20
I_D
(A)
14
12
200
100
0
0
2
V_GS (V) = 10
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4
6
003aac076
8
10
V_DS (V)
60
g_fs
(S)
40
003aac073
20
0
0
20
40
60
I_D (A)
Fig 5. Output characteristics: drain current as a
Fig 6. Forward transconductance as a function of
function of drain-source voltage; typical values
drain current; typical values
16
R_DSon
(mΩ)
6.0 6.5 7.0
12
003aac077
8.0
V_GS (V) = 10
100
I_D
(A)
75
003aac074
50
8
25
20
T_j = 175 °C
25 °C
4
0
100
200
300
I_D (A)
0
0
2
4
6
8
V_GS (V)
Fig 7. Drain-source on-state resistance as a function Fig 8. Transfer characteristics: drain current as a
of drain current; typical values
function of gate-source voltage; typical values
BUK7608-40B_4
Product data sheet
Rev. 04 — 24 September 2008
© NXP B.V. 2008. All rights reserved.
6 of 12