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BUK7608-40B_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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BUK7608-40B
N-channel TrenchMOS standard level FET
Rev. 04 â 24 September 2008
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Suitable for standard level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V loads
 Automotive systems
 General purpose power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
-
-
40 V
ID
drain current
VGS = 10 V; Tmb = 25 °C; [1] -
-
75 A
see Figure 1; see Figure 3;
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
157 W
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup ⤠40 V;
RGS = 50 â¦; VGS = 10 V;
Tj(init) = 25 °C; unclamped
-
-
241 mJ
QGD
gate-drain charge VGS = 10 V; ID = 25 A;
VDS = 32 V; Tj = 25 °C; see
Figure 14
-
12 -
nC
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12;
see Figure 11
-
6.6 8
mâ¦
[1] Continuous current is limited by package.
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