BUK7608-40B_15 Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7608-40B
N-channel TrenchMOS standard level FET
Table 4. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Avalanche ruggedness
E_DS(AL)S
non-repetitive
I_D = 75 A; V_sup ≤ 40 V; R_GS = 50 Ω; V_GS = 10 V;
drain-source avalanche T_j(init) = 25 °C; unclamped
energy
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
120
I_D
(A)
80
003aac081
120
P_der
(%)
80
Min Max Unit
-
241 mJ
003aac070
(1)
40
40
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of solder point temperature
10³
I_D
(A)
10²
10
1
10^−1
Limit R_DSon = V_DS / I_D
(1)
1
003aac079
t_p = 10 μs
100 μs
1 ms
10 ms
100 ms
DC
10
10²
V_DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7608-40B_4
Product data sheet
Rev. 04 — 24 September 2008
© NXP B.V. 2008. All rights reserved.
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