BUK754R0-55B_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK754R0-55B
N-channel TrenchMOS standard level FET
100
I_D
(A)
80
60
40
20
0
0
03nh20
T_j = 175 °C
T_j = 25 °C
2
4
V_GS (V) ⁶
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
Fig 10. Transfer characteristics: drain current as a
Fig 11. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
2
03ne89
10
03nh18
V_GS
a
(V)
8
1.5
6
V_DS (V) = 14
V_DS (V) = 44
1
4
0.5
2
0
-60
0
60
120
180
Tj (°C)
0
0
20
40
60
80
100
Q_G (nC)
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Gate-source voltage as a function of turn-on
gate charge; typical values
BUK754R0-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 22 April 2011
© NXP B.V. 2011. All rights reserved.
8 of 14