BUK754R0-55B_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK754R0-55B
N-channel TrenchMOS standard level FET
200
I_D
(A)
150
001aaf871
100
(1)
50
0
25
75
125
175
T_mb (°C)
(1) Capped at 75 A due to package.
Fig 1. Continuous drain current as a function of
mounting base temperature
10²
I_AL
(A)
10
1
120
P_der
(%)
80
03na19
40
0
0
50
100
150
200
T_mb (°C)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aab677
(1)
(2)
(3)
10^-1
10^-3
10^-2
10^-1
1 _{tAL (ms)} 10
(1) Single-pulse; T_j = 25 °C.
(2) Single-pulse; T_j = 150 °C.
(3) Repetitive
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK754R0-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 22 April 2011
© NXP B.V. 2011. All rights reserved.
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