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| BUK754R0-55B_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK754R0-55B
N-channel TrenchMOS standard level FET
103
ID
(A)
Limit RDSon = VDS / ID
102
(1)
DC
10
03ng55
tp = 10 μ s
100 μs
1 ms
10 ms
100 ms
1
10-1
1
10
102
VDS (V)
(1) Capped at 75 A due to package.
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 5
vertical in still air
Min Typ Max Unit
-
-
0.5 K/W
-
60
-
K/W
1
Zth(j-mb) δ = 0.5
(K/W)
10-1 0.2
0.1
0.05
10-2 0.02
03ng56
P
δ = tp
T
single shot
tp
t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK754R0-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 â 22 April 2011
© NXP B.V. 2011. All rights reserved.
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