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| BUK754R0-55B_15 Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK754R0-55B
N-channel TrenchMOS standard level FET
Table 1. Quick reference data â¦continued
Symbol Parameter
Conditions
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup ⤠55 V;
RGS = 50 â¦; VGS = 10 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge VGS = 10 V; ID = 25 A;
VDS = 44 V; Tj = 25 °C;
see Figure 13
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
- - 1.2 J
- 25 - nC
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
gate
D
drain
S
source
D
mounting base;
connected to drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78A (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
BUK754R0-55B
TO-220AB
Description
plastic single-ended package; heatsink mounted;
1 mounting hole; 3-lead TO-220AB
Version
SOT78A
BUK754R0-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 â 22 April 2011
© NXP B.V. 2011. All rights reserved.
2 of 14
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