BUK754R0-40C_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK754R0-40C
N-channel TrenchMOS standard level FET
200
ID
(A)
150
20 10 VGS (V) = 6.5
100
50
0
0
1.5
3
003aac576
6
5.75
5.5
5.25
5
4.5 V_DS (V) 6
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
Fig 9. Output characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of drain-source voltage; typical values
junction temperature
2
03ne89
22
003aac579
a
RDSon ^{VGS (V) = 4.5}
5
5.25 5.5
5.75
(mΩ )
1.5
17
1
12
0.5
0
-60
0
60
120
180
Tj (°C)
7
6
6.5
10
20
2
0
60
120 _{ID (A)} 180
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
BUK754R0-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 20 July 2010
© NXP B.V. 2010. All rights reserved.
8 of 14