BUK754R0-40C_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK754R0-40C
N-channel TrenchMOS standard level FET
Rev. 02 — 20 July 2010
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Avalanche robust
„ Suitable for standard level gate drive
„ Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
„ 12V Motor, lamp and solenoid loads
„ High performance automotive power
systems
„ High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; ^[1]
see Figure 1; see Figure 3
P_tot
total power dissipation T_mb = 25 °C; see Figure 2
Static characteristics
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 11;
see Figure 12
Min Typ Max Unit
-
-
40 V
-
-
100 A
-
-
203 W
-
3.4 4
mΩ