BUK754R0-40C_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK754R0-40C
N-channel TrenchMOS standard level FET
8
RDSon
(mΩ)
7
6
5
4
3
4
003aac578
8
12
16 _{VGS (V)} 20
120
003aac583
g_fs
(S)
90
60
30
0
0
15
30
45 I_D (A) 60
Fig 5. Drain-source on-state resistance as a function Fig 6. Forward transconductance as a function of
of gate voltage; typical values
drain current; typical values
150
ID
(A)
120
003aac584
10^−1
I_D
(A)
10^−2
03aa35
min typ max
90
10^−3
60
Tj = 175°C
25 °C
30
10^−4
10^−5
0
0
2
4
6
8
VGS (V)
10^−6
0
2
4
6
V_GS (V)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Sub-threshold drain current as a function of
function of gate-source voltage; typical values
gate-source voltage
BUK754R0-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 20 July 2010
© NXP B.V. 2010. All rights reserved.
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