BUK754R0-40C_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
200
ID
(A)
150
Capped at 100A due to package
100
003aac893
50
0
25
75
125 _{Tmb (°C)} 175
BUK754R0-40C
N-channel TrenchMOS standard level FET
120
P_der
(%)
80
03na19
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature.
10³
ID (A)
10²
Limit RDSon = VDS / ID
10
1
10^-1
10^-1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aac581
tp = 10 μs
100 μs
DC
1 ms
10 ms
100 ms
10
10²
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
BUK754R0-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 20 July 2010
© NXP B.V. 2010. All rights reserved.
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