BUK7508-55A Datasheet, PDF (8/14 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7508-55A; BUK7608-55A
TrenchMOS™ standard level FET
100
ID
(A)
80
60
03nh43
10
VGS
(V)
8
6
03nh41
VDD = 14 (V)
VDD = 44 (V)
40
4
Tj = 175 ºC
Tj = 25 ºC
20
2
0
0
2
4
6
8
VGS (V)
0
0
20
40
60
80
QG (nC)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
100
IS
(A)
80
60
03nh40
Tj = 175 ºC
40
20
Tj = 25 ºC
0
0
0.2 0.4 0.6 0.8 1.0 1.2
VSD (V)
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 09091
Product data
Rev. 02 — 17 January 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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