BUK7508-55A Datasheet, PDF (6/14 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7508-55A; BUK7608-55A
TrenchMOS™ standard level FET
Table 5: Characteristics…continued
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Source-drain diode
V_SD
source-drain (diode forward) I_S = 25 A; V_GS = 0 V;
-
voltage
Figure 15
t_rr
reverse recovery time
I_S = 75 A; dI_S/dt = −100 A/µs
-
Q_r
recovered charge
V_GS = −10 V; V_DS = 30 V
-
Typ
Max
Unit
0.85
1.2
V
65
-
ns
170
-
nC
ID160 18 V
(A)
140
120
10 V
8.0 V
100
80
60
40
20
0
0
2
4
03nh45
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
VGS = 4.5 V
6
8
10
VDS (V)
14
RDSon
(mΩ)
12
10
8
6
5
03nh44
10
15
20
VGS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
25
03nh46
2
RDSon
a
(mΩ)
20
VGS = 5.5 (V)
6
1.5
03ne89
15
1
6.5
10
7
0.5
7.5
9
10
5
0
20
40
60
80 100 120
ID (A)
0
-60
0
60
120
180
Tj (ºC)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = -_R---_D----^R_S---_oD---_n-^S-₍--^o2--₅-ⁿ--_°--_C---₎
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 09091
Product data
Rev. 02 — 17 January 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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