BUK7508-55A Datasheet, PDF (3/14 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7508-55A; BUK7608-55A
TrenchMOS™ standard level FET
120
Pder
(%)
100
03na19
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Tmb _(ºC)
P_der = _P-------^P----^t--^o---^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
140
ID
(A)
120
03nh50
100
80
60
40 ^{Capped at 75 A due to package}
20
0
25 50 75 100 125 150 175 200
Tmb (ºC)
V_GS ≥ 4.5 V
Fig 2. Continuous drain current as a function of
mounting base temperature.
103
ID
(A)
RDSon = VDS / ID
102
Capped at 75 A due to package
DC
10
03nh48
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
1
1
10
VDS (V)
102
T_mb = 25 °C; I_DM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09091
Product data
Rev. 02 — 17 January 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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