BUK7508-55A Datasheet, PDF (5/14 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7508-55A; BUK7608-55A
TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V_(BR)DSS drain-source breakdown
I_D = 0.25 mA; V_GS = 0 V
voltage
T_j = 25 °C
55
-
-
V
T_j = −55 °C
50
-
-
V
V_GS(th)
gate-source threshold voltage I_D = 1 mA; V_DS = V_GS;
Figure 9
I_DSS
I_GSS
R_DSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
T_j = 25 °C
T_j = 175 °C
T_j = −55 °C
V_DS = 55 V; V_GS = 0 V
T_j = 25 °C
T_j = 175 °C
V_GS = ±20 V; V_DS = 0 V
V_GS = 10 V; I_D = 25 A;
Figure 7 and 8
2
3
4
V
1
-
-
V
-
-
4.4
V
-
0.05
10
µA
-
-
500
µA
-
2
100
nA
Dynamic characteristics
T_j = 25 °C
T_j = 175 °C
-
6.8
8
mΩ
-
-
16
mΩ
Q_g(tot)
total gate charge
V_GS = 0 V; V_DD = 44 V;
-
Q_gs
gate-to-source charge
I_D = 25 A; Figure 14
-
Q_gd
gate-to-drain (Miller) charge
-
C_iss
input capacitance
V_GS = 0 V; V_DS = 25 V;
-
C_oss
output capacitance
f = 1 MHz; Figure 12
-
C_rss
reverse transfer capacitance
-
t_d(on)
t_r
turn-on delay time
rise time
V_DD = 30 V; R_L = 1.2 Ω;
-
V_GS = 5 V; R_G = 10 Ω;
-
t_d(off)
turn-off delay time
-
t_f
fall time
-
L_d
internal drain inductance
from drain lead 6 mm from
-
package to centre of die
76
-
nC
16
-
nC
35
-
nC
3264
4352
pF
719
863
pF
390
533
pF
24
-
ns
94
-
ns
100
-
ns
80
-
ns
4.5
-
nH
from contact screw on
-
3.5
-
nH
mounting base to centre of
die SOT78
from upper edge of drain
-
2.5
-
nH
mounting base to centre of
die SOT404
L_s
internal source inductance from source lead to source
-
7.5
-
nH
bond pad
9397 750 09091
Product data
Rev. 02 — 17 January 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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