BUK7504-40A Datasheet, PDF (8/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS™ standard level FET
150
ID
(A)
100
50
0
0
03ne63
Tj = 175 ^oC
Tj = 25 ^oC
2
4
6
VGS (V)
10
VGS
(V)
8
6
4
2
0
0
03ne61
VDD = 14 V
VDD = 32 V
30
60
90
120
QG (nC)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
200
IS
(A)
150
03ne60
100
50
Tj = 175 ^oC
0
0.0
0.5
Tj = 25 ^oC
1.0
1.5
VSD (V)
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 09059
Product data
Rev. 02 — 7 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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