BUK7504-40A Datasheet, PDF (7/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS™ standard level FET
5
VGS(th)
(V)
4
3
2
1
0
-60
0
max
typ
min
03aa32
60
120
180
Tj (ºC)
10-1
ID
(A)
10-2
10-3
10-4
10-5
10-6
0
min
2
03aa35
typ _max
4
6
VGS (V)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C; V_DS = V_GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
100
gfs
(S)
80
03ne62
60
40
20
0
0
20
40
60
80
ID (A)
T_j = 25 °C; V_DS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
8000
C
(pF)
6000
4000
Ciss
Coss
03ne67
2000
0
10-1
Crss
1
10
102
VDS (V)
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 09059
Product data
Rev. 02 — 7 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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