BUK7504-40A Datasheet, PDF (6/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS™ standard level FET
Table 5: Characteristics…continued
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Source-drain diode
V_SD
source-drain (diode forward) I_S = 40 A; V_GS = 0 V;
−
voltage
Figure 15
t_rr
reverse recovery time
I_S = 20 A; dI_S/dt = −100 A/µs
−
Q_r
recovered charge
V_GS = −10 V; V_DS = 30 V
−
Typ
Max
Unit
0.85
1.2
V
96
−
ns
224
−
nC
ID 450
(A)
400
350
10
12
9 _8.5
20
300
250
200
150
100
50
0
0
2
4
03ne65
7.5
6.5
VGS (V) = _5.5
4.5
6
8
10
VDS (V)
6
RDSon
(mΩ)
5
03ne64
4
3
5
10
15
20
VGS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
10
03ne66
2
RDSon
a
(mΩ)
VGS (V) = 6
7
8
1.6
8
6
1.2
9
10
4
0.8
03aa27
2
0.4
0
0 50 100 150 200 250 300 350 400
ID (A)
0
-60
0
60
120 _{Tj (oC)} 180
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 09059
Product data
Rev. 02 — 7 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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