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BUK7504-40A Datasheet, PDF (5/15 Pages) NXP Semiconductors – TrenchMOS standard level FET | |||
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Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS⢠standard level FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown
ID = 0.25 mA; VGS = 0 V
voltage
Tj = 25 °C
40
â
â
V
Tj = â55 °C
36
â
â
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = â55 °C
VDS = 40 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;
Figure 7 and 8
2
3
4
V
1
â
â
V
â
â
4.4
V
â
0.05
10
µA
â
â
500
µA
â
2
100
nA
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
â
3.9
4.5
mâ¦
â
â
8.5
mâ¦
Qg(tot)
total gate charge
VGS = 10 V; VDD = 32 V;
â
Qgs
gate-to-source charge
ID = 25 A; Figure 14
â
Qgd
gate-to-drain (Miller) charge
â
Ciss
input capacitance
VGS = 0 V; VDS = 25 V;
â
Coss
output capacitance
f = 1 MHz; Figure 12
â
Crss
reverse transfer capacitance
â
td(on)
tr
turn-on delay time
rise time
VDD = 30 V; RL = 1.2 â¦;
â
VGS = 10 V; RG = 10 â¦;
â
td(off)
turn-off delay time
â
tf
fall time
â
Ld
internal drain inductance
from drain lead 6mm from
â
package to centre of die
117
â
nC
19
â
nC
50
â
nC
4300
5730
pF
1400
1680
pF
800
1100
pF
33
â
ns
110
â
ns
151
â
ns
76
â
ns
4.5
â
nH
from contact screw on
â
3.5
â
nH
mounting base to centre of
die SOT78
from upper edge of drain
â
2.5
â
nH
mounting base to centre of
die SOT404 / SOT226
Ls
internal source inductance from source lead to source
â
7.5
â
nH
bond pad
9397 750 09059
Product data
Rev. 02 â 7 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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