BUK724R5-30C_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK724R5-30C
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 10. Gate-source threshold voltage as a function of Fig 11. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
2
a
03aa27
12
R_{DSon 5}
(mΩ)
5.5
6
003aac423
7.5
10
1.5
8
1
6
V_GS = 10 (V)
0.5
4
20
0
−60
0
60
120 _{Tj (°C)} 180
2
0
100
200
300 _{ID (A)} 400
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
BUK724R5-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 1 July 2010
© NXP B.V. 2010. All rights reserved.
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