BUK724R5-30C_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
140
I_D
(A)
120
100
80
60
40
20
0
0
(1)
50
003aac349
100
150
200
T_mb (°C)
BUK724R5-30C
N-channel TrenchMOS standard level FET
120
P_der
(%)
80
03na19
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10³
I_AL
(A)
10²
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aac351
(1)
10
(2)
1
(3)
10^-1
10^-3
10^-2
10^-1
1
10
t_AL (ms)
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK724R5-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 1 July 2010
© NXP B.V. 2010. All rights reserved.
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