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| BUK724R5-30C_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK724R5-30C
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS
VDGR
VGS
ID
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
drain-gate voltage
RGS = 20 kâ¦
gate-source voltage
drain current
VGS = 10 V; Tj = 25 °C; see Figure 1; [1]
see Figure 4
-
-
-
-
-20 -
-
-
30 V
30 V
20 V
136 A
Tmb = 100 °C; VGS = 10 V; see Figure 1 [2]
-
-
75 A
VGS = 10 V; Tj = 25 °C; see Figure 1
[2]
-
-
75 A
IDM
peak drain current
tp ⤠10 µs; pulsed; Tj = 25 °C;
see Figure 4
-
-
543 A
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
-
-
-55 -
-55 -
157 W
175 °C
175 °C
IS
source current
Tmb = 25 °C
[2]
-
-
75 A
[1]
-
-
136 A
ISM
peak source current
Avalanche ruggedness
tp ⤠10 µs; pulsed; Tmb = 25 °C
-
-
543 A
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 75 A; Vsup ⤠30 V; RGS = 50 â¦;
VGS = 10 V; Tj(init) = 25 °C; unclamped
-
-
329 mJ
EDS(AL)R
repetitive drain-source see Figure 3
avalanche energy
[3][4][5] -
-
-
J
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[4] Repetitive avalanche rating limited by average junction temperature of 170 °C.
[5] Refer to application note AN10273 for further information.
BUK724R5-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 â 1 July 2010
© NXP B.V. 2010. All rights reserved.
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