BUK724R5-30C_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK724R5-30C
N-channel TrenchMOS standard level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 20 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs;
Q_r
recovered charge
V_GS = -10 V; V_DS = 25 V; T_j = 25 °C
400
I_D
20 ¹⁵
(A)
10
300
200
100
0
0
2
003aac408
V_GS = 7.5 (V)
7
6.5
6
5.5
5
4.5
4
6
8
10
V_DS (V)
80
I_D
(A)
60
40
20
0
0
Min Typ Max Unit
-
0.85 1.2 V
-
40
-
ns
-
44
-
nC
003aac353
T_j = 175 °C
25 °C
2
4 _{VGS (V)} 6
Fig 6. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
003aac422
003aac421
80
12
g_fs
(S)
R_DSon
(mΩ)
10
60
8
40
6
20
4
0
0
20
40 _{ID (A)} 60
2
5
10
15 _{VGS (V)} 20
Fig 8. Forward transconductance as a function of
drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK724R5-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 1 July 2010
© NXP B.V. 2010. All rights reserved.
7 of 14