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| BFU530_15 Datasheet, PDF (8/22 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU530
NPN wideband silicon RF transistor
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DDD
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DDD
9%( 9
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Tamb = 25 ï°C.
(1) VCE = 3.0 V
(2) VCE = 8.0 V
Fig 5. Collector current as a function of base-emitter
voltage; typical values
Tamb = 25 ï°C.
(1) VCE = 3.0 V
(2) VCE = 8.0 V
Fig 6. Base current as a function of base-emitter
voltage; typical values
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DDD
&&
I)
DDD
9(% 9
VCE = 3 V.
(1) Tamb = ï40 ï°C
(2) Tamb = +25 ï°C
(3) Tamb = +125 ï°C
Fig 7. Reverse base current as a function of
emitter-base voltage; typical values
9&% 9
IC = 0 mA; f = 1 MHz; Tamb = 25 ï°C.
Fig 8. Collector capacitance as a function of
collector-base voltage; typical values
BFU530
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 5 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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