BFU530_15 Datasheet, PDF (3/22 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU530
NPN wideband silicon RF transistor
5. Design support
Table 5. Available design support
Download from the BFU530 product information page on http://www.nxp.com.
Support item
Available
Remarks
Device models for Agilent EEsof EDA ADS yes
Based on Mextram device model.
SPICE model
yes
Based on Gummel-Poon device
model.
S-parameters
yes
Noise parameters
yes
Customer evaluation kit
yes
See Section 3 and Section 10.
Solder pattern
yes
Application notes
yes
See Section 10.1 and Section 10.2.
6. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_CB
collector-base voltage
V_CE
collector-emitter voltage
open emitter
open base
shorted base
V_EB
I_C
T_stg
V_ESD
emitter-base voltage
collector current
storage temperature
electrostatic discharge voltage
open collector
Human Body Model (HBM) According to JEDEC
standard 22-A114E
Charged Device Model (CDM) According to
JEDEC standard 22-C101B
7. Recommended operating conditions
Min Max Unit
- 30 V
- 16 V
- 30 V
-3
V
- 65 mA
65 +150 C
- 150 V
- 2 kV
Table 7.
Symbol
V_CB
V_CE
Characteristics
Parameter
collector-base voltage
collector-emitter voltage
V_EB
emitter-base voltage
I_C
collector current
P_i
input power
T_j
junction temperature
P_tot
total power dissipation
Conditions
open emitter
open base
shorted base
open collector
Z_S = 50 
T_sp  87 C
[1] T_sp is the temperature at the solder point of the collector lead.
Min Typ Max Unit
-
-
24
V
-
-
12
V
-
-
24
V
-
-
2
V
-
-
40
mA
-
-
10
dBm
40 -
+150 C
[1] _-
-
450 mW
BFU530
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 5 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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