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| BFU530_15 Datasheet, PDF (14/22 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU530
NPN wideband silicon RF transistor
1)PLQ
G%
DDD
,& P$
VCE = 8 V; Tamb = 25 ï°C; ïS = ïopt.
(1) f = 433 MHz
(2) f = 900 MHz
(3) f = 1800 MHz
Fig 22. Minimum noise figure as a function of
collector current; typical values
1)PLQ
G%
DDD
I 0+]
VCE = 8 V; Tamb = 25 ï°C; ïS = ïopt.
(1) IC = 1 mA
(2) IC = 2 mA
(3) IC = 3 mA
(4) IC = 5 mA
(5) IC = 10 mA
(6) IC = 15 mA
(7) IC = 20 mA
(8) IC = 25 mA
Fig 23. Minimum noise figure as a function of
frequency; typical values
BFU530
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 5 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
14 of 22
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